Paper Title: Compute-in-Memory with Ferroelectricity

Paper Abstract: Discovery of ferroelectricity in doped hafnium dioxide thin films has ignited a flurry of activity in exploration of ferroelectric FETs for a range of applications from high-performance logic to embedded non-volatile memory to in-memory compute fabrics. In this talk, we will track the evolution of Ferroelectric Field Effect Transistors(FeFETs) and explore the emergent ferroelectronics platform. FeFET through proper design can be configured into negative capacitance FETs (NCFETs) for logic. FeFET exhibits superior energy efficiency and high performance as embedded nonvolatile memory. The polarization switching dynamics in multi-domain ferroelectric can be harnessed to develop analog synaptic weight cell for in situ training of deep learning networks. FeFET-based in-memory computing hardware primitives, such as content addressable memory, are demonstrated for applications in few-shot learning. With these developments, ferroelectronic platform has evolved from traditional memory to new compute paradigm

Paper Author: Suman Datta, Professor, University of Notre Dame

Author Bio: Suman Datta is the Stinson Professor of Nanotechnology in the Electrical Engineering Department at the University of Notre Dame. He is Adjunct Professor of School of Electrical and Computer Engineering at Georgia Institute of Technology. Prior to that, he was a Professor of Electrical Engineering at The Pennsylvania State University, University Park, from 2007 to 2011. From 1999 till 2007, he was in the Advanced Transistor Group at Intel Corporation, Hillsboro, where he developed several generations of high-performance logic transistor technologies including high-k/metal gate, Tri-gate and non-silicon channel CMOS transistor technologies. His research group currently focuses on emerging device concepts that enable new computational models. He is a Fellow of IEEE and the National Academy of Inventors (NAI). He has published over 400 journal and refereed conference papers and holds 187 patents related to advanced device technologies. He is the Director of a multi-university advanced microelectronics research center, the ASCENT, funded by the Semiconductor Research Corporation (SRC) and the Defense Advanced Research Projects Agency (DARPA).