Paper Title: Multi-Physics Phase-Field Simulation of RRAM Electroformation

Paper Abstract: A multi-physics phase-field method with Joule heating and heat transport is used to computationally study the formation and morphological evolution of conducting channel of resistive switching thin films. In contrast to preceding computational formulations, which demonstrated set-reset processes with a pre-defined continuum-based conducting channel model, our previous isothermal phase-field framework demonstrated conducting filament formation without an a priori conducting channel model. The present computational framework extends our earlier phase-field framework by adding Joule heating and heat transport, enabling the atomic-scale study of resistive switching phenomena under realistic conditions

Paper Author: Nobihuko Kobayashi, Professor, UC Santa Cruz

Author Bio: Doctor Nobihuko Kobayashi is currently a Professor of Electrical Engineering at University of California at Santa Cruz. His group conducts fundamental on the fabrication, characterization, and simulation of thin-film structures for advanced memory applications.