Paper Title: Emerging Non-Volatile Memory - A 2022 Market Update
Paper Abstract: This presentation will provide a high-level overview of emerging non-volatile memory (NVM) markets and technologies, discussing their status and their potential for mass adoption. It will provide updates regarding the progress of key technologies achieved by leading companies, highlighting differences, challenges, and opportunities for several stand-alone and embedded NVM options. This will include MRAM, ReRAM, PCM (incl. XPoint), as well as newly emerging ferroelectric memory technologies. Market perspectives for leading emerging NVM technologies will also be presented. The discussion will be supported by recent market data and technical results as collected by the market research company Yole Developpement in the first half of 2022 (1H22)
Paper Author: Simone Bertolazzi, Technology and Market Analyst, Yole Dveloppement
Author Bio: Simone is Senior Technology & Market analyst at Yole Développement (Yole) working with the Semiconductor, Memory and Computing Division . He is member of the Yole’s memory team, and he contributes on a day-to-day basis to the analysis of memory markets and technologies, their related materials and fabrication processes. Previously, Simone carried out experimental research in the field of nanoscience and nanotechnology, focusing on emerging semiconducting materials and their device applications. He (co-) authored more than 20 papers in high-impact scientific journals and was awarded the prestigious Marie Curie Intra-European Fellowship. Simone obtained a PhD in physics in 2015 from École Polytechnique Fédérale de Lausanne (Switzerland), where he developed novel flash memory cells based on heterostructures of 2D materials and high-κ dielectrics. Simone earned a double M. A. Sc. degree from Polytechnique de Montréal (Canada) and Politecnico di Milano (Italy), graduating cum laude.
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