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8:30-9:35 AM
OMEM-201-1: RRAM (Other Memory Technologies Track)
Paper Title: Advances and Cenefits of EUV Lithography in Memory Manufacturing Process

Paper Abstract: DRAM scaling has been progressively slowing down, the era of big data era challenges memory manufacturers to continue to provide density improvements. EUV technology has been introduced in the DRAM memory manufacturing process to eliminates some difficulties associated with DRAM cell scaling. EUV lithography eliminates multiple patterning in the manufacturing process, resulting in reduced manufacturing time hence increases productivity and accurate patterning. The presentation outlines the benefits of the new technology to enable further miniaturization of volatile memories and the cost impact in commercial EUV memory products. The DRAM memory roadmap will foresee several generations of DRAM memory relying on the lithography process. EUV lithography is applied on critical steps in the manufacturing process, revealed by the DRAM die cross section analysis. This talk will include case studies to reveal the technology and high-resolution images (Scanning Electron Microscopy) of the latest DRAM cross section and the cost impact of adopting EUV lithography in memories.

Paper Author: Belinda Langelihme Dube, TECHNOLOGY ANALYST, SYSTEMPLUS CONSULTING

Author Bio: Belinda Dube serves as a Technology & Cost Analyst at System Plus Consulting, part of Yole Développement. Belinda’s core expertise is memory technology, especially DRAM and 3D NAND flash memory. At the same time, she also investigates IC technologies as well as advanced packaging. Belinda’s mission is to develop reverse engineering & costing reports. She also works on custom projects, where she works closely with the laboratory team to set up significant physical & chemical analyses of innovative memory chips Belinda holds a master’s degree in Instrumentation & Nanotechnology Engineering from INSA (France).