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9:45-10:50 AM
OMEM-301-2: New/Emerging Memories Part 2 (Other Memory Technologies Track)
Paper Title: Perfect Read Non-Destructive Dynamic Flash Memory (DFM)

Paper Abstract: This presentation proposes an ultra-scaled memory device, called Dynamic Flash Memory (DFM). With a dual-gate Surrounding Gate Transistor (SGT), a capacitorless 4F2 cell can be achieved. Similar to DRAM, refresh is required, but fast block refresh can improve the duty ratio. Analogous to Flash, Erase Program, and Read are necessary, but the holes can be regenerated while read for realizing the perfect read non-destructive DFM. Namely, DFM is a quasi-nonvolatile memory.

Paper Author: Koji Sakui, Executive Technical Manager, Unisantis Electronics Singapore Pte Ltd.

Author Bio: In 1981, he joined the Toshiba Research and Development Center, Toshiba Corporation, where he was engaged in the circuit design of DRAM’s. Since 1990 he has been engaged in the development of high- density NAND Flash memories. He managed Flash Memory Design Department of SoC R & D Center to develop 90nm, 70nm, and 55nm NAND Flash memory design. He moved to Sony Corporation in 2004 and served as a General Manager of Memory System Department of System LSI Business Division, Semiconductor Business Group. In 2007, he moved to NAND Products Group, Intel Corporation, where he was a Research Scientist. In 2009, he became a Visiting Professor of Tohoku University. In 2010, he joined Micron as Sr. Architect and Technologist – Memory Innovations, where he has 75 US granted patents on the 3D NAND. In 2017, he became a Principal Scientist of Honda Research Institute Japan. In 2020 he has become an Executive Technical Manager of Unisantis Electronics Singapore Pte Ltd. Dr. Sakui is a member of the IEEE Electron Device Society and served a Technical Program Committee for the IEEE NVSMW (Non-Volatile Semiconductor Memory Workshop), currently the IEEE IMW (International Memory Workshop) from 1998 to 2012. In 2012 he became an IEEE Fellow, with the accompanying citation: “for the contribution to NAND flash memories.” He holds 165 US patents granted and published over 30 technical papers. He received Kanagawa Governor Patent Award in 1997 and Kanto District Patent Award in 2005.