Paper Title: Nantero NRAM, DDR5 Speeds with Non-Volatility

Paper Abstract: Nantero NRAM is a memory cell constructed using carbon nanotubes (CNTs) as a resistive element. CNTs create molecular bonds that do not require power to hold their state, i.e., inherently non-volatile. These NRAM cells can be arranged into a variety of configurations based on application requirements such as density and speed. Configurations include driver-per-cell, differential, and crosspoint arrays. NRAM differentiates from other memory design approaches in being inherently 3D: cells can be stacked vertically using the same production steps. The big question is: what’s the status? When can I buy NRAMs? What is a DDR5 NRAM?

Paper Author: Bill Gervasi, Principal Systems Architect, Nantero

Author Bio: Mr. Gervasi has over 40 years of experience in high speed memory subsystem definition, design, and product development. Career highlights include 19 years at Intel where he was systems hardware designer, software designer, and strategic accounts manager. Mr. Gervasi subsequently was with S3 where he was a graphics architecture specialist and at Transmeta as memory technology analyst. Most recently he held several key positions with companies such as Netlist, SimpleTech, and US Modular driving unique memory module configurations. He is now Principal Systems Architect for Nantero, developing non-volatile RAM-class memories. Mr. Gervasi been involved in the definition of Double Data Rate SDRAM since its earliest inception. He has served on the JEDEC Board of Directors and chaired committees for DRAM parametrics and small form factor memory modules during the development of DDR1 through DDR5. He is currently the chairman of the JEDEC Alternative Memory committee.