Paper Title: Flash and Other Emerging Memory Technology Trends

Paper Abstract: All the 3D NAND manufacturers are continuing to increase the number of vertical 3D NAND gates with their own technology innovations such as HAR 1-stack VC, BiCS, CuA, and PUC. Many innovative changes and challenges are there on process integration, design architecture and cell operation. For the emerging memory (EM) including STT-MRAM, XPoint, PCRAM and ReRAM (CBRAM), many of the memory players and foundries are eager to develop EM for higher speed, low power, and almost unlimited retention/endurance operation. A recent emerging memory technology details and products from major players will be updated and discussed.

Paper Author: Jeongdong Choe, Senior Technical Fellow, TechInsights

Author Bio: Dr. Jeongdong Choe is a Senior Technical Fellow at TechInsights. He has over 27 years of experience in the semiconductor industry, R&D and reverse engineering on DRAM, NAND/NOR FLASH, SRAM/Logic, emerging memory and package. He worked for SK Hynix (old LG Semicon or Goldstar Electronics) and Samsung Electronics for over 20 years. He joined TechInsights and has been focusing on technical research, reverse engineering, patent analysis and consulting on semiconductor process and device technology. He has written many papers and articles on memory technology including DRAM comparison, 2D and 3D NAND details, and XPoint design and architecture. He quarterly produces and updates a widely distributed roadmaps for memory technology and products on DRAM, NAND and Emerging memory such as MRAM/STT-MRAM, PCRAM/XPoint, ReRAM and FeRAM.