Paper Title: STT-MRAM: A High Density Persistent Memory Solution

Paper Abstract: Flash memory is limited by performance such as data-access-speed, bit-access, and data retention. In this presentation, we will review competing alternate technologies that are being explored. The high endurance and strong data retention of STT-MRAM technology makes it a viable alternative to embedded SRAM and NAND flash technologies. Everspin is in volume production of 40nm 256Mb STT-MRAM, and in early production of 28nm 1Gb STT-MRAM. This presentation will discuss the technical and manufacturing challenges, as well as the innovative solutions, that have been necessary to bring these devices to production. MgO/CoFeB-based perpendicular MTJ (pMTJ) stacks were developed and integrated into a copper backend that enables highly reliable and functional MRAM products. Our pMTJ stacks are engineered and process integration optimized for high spin torque switching efficiency, robust tunnel barrier reliability and high yields.

Paper Author: Sanjeev Aggarwal, Vice President of Technology, Everspin

Author Bio: Sanjeev directs the R&D program for Everspin’s Spin-Torque MRAM. The scope includes managing engineering groups to resource and execute on projects from technology definition to qualification, driving cross functional alignment across various departments, as well as manage joint development agreements for technology transfer and production. Prior to this role, he was VP, Manufacturing and Process at Everspin, where he was responsible for FAB operations managing the production of Toggle and Spin-Torque MRAM. Prior to Everspin, Sanjeev was senior member of the Technical Staff at Freescale Semiconductor and led a team responsible for development and integration of Toggle and Spin-Torque MRAM on CMOS. Before joining Freescale in 2006, Sanjeev was member Group Technical Staff at Texas Instruments where he played a lead role in the development and commercialization of ferroelectric memories. He received the Technical Excellence Award in recognition of his contributions to bringing ferroelectric memories from R&D to production. At University of Maryland, Sanjeev was a Research Professor, where his work was focused on correlating thin film deposition technique, microstructure and reliability of ferroelectric memory devices. Sanjeev’s technical contributions has led to over 60 issued patents, more than 100 publications and numerous invited presentations.