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8:30-9:35 AM
NEWM-301A-1: Life Beyond Flash - New Non-Volatile Memory Technologies (New Memory Technologies Track)
Paper Title: Challenges and Strategies for Mass Adoption of Emerging Non-Volatile Memories

Paper Abstract: Emerging non-volatile memory (NVM) has for long been restricted to niche applications because of poor scalability, high cost, and a lack of support from major memory makers. But in 2017, after more than 15 years in development, the first PCM-based technology (3DXPoint) for storage class memory (SCM) applications was finally introduced in the market. Thanks to the growth of 3D XPoint sales enabled by Intel’s dominant position in the enterprise processor business, SCM is expected to be the dominant application for emerging NVMs in the next five years. In the embedded business, all top foundries are getting ready with 28/22nm technology processes for emerging NVM to be integrated into MCUs/SoCs. STT-MRAM has advanced faster than RRAM and it will likely lead the embedded emerging NVM market. This presentation will provide an overview of both stand-alone and embedded emerging NVM technologies and markets, discussing their current status and future evolution towards mass adoption.

Paper Author: Simone Bertolazzi, Engineer Analyst, YOLE Group

Author Bio: Simone Bertolazzi, PhD, is a Technology & Market analyst at Yole Developpement (Yole) working with the Semiconductor & Software division. He is a member of the Yole's memory team and he contributes on a day-to-day basis to the analysis of memory technologies, their related materials and fabrication processes. Previously, Simone carried out experimental research in the field of nanoscience and nanotechnology, focusing on emerging semiconducting materials and their optoelectronic device applications. He co-authored more than ten papers in high-impact scientific journals and was awarded the prestigious Marie Curie Intra-European Fellowship. Simone obtained a PhD in physics in 2015 from Ecole polytechnique fédérale de Lausanne (Switzerland), where he developed flash memory cells based on heterostructures of graphene, 2D semiconductors and high-K dielectrics.