Paper Title: Making SiOx ReRAM a Cost-effective Embedded Memory

Paper Abstract: Among emerging NVM technologies, ReRAM’s process simplicity, low power consumption, and fast switching make it a compelling candidate for embedded NVM (eNVM) in low-power, always-connected devices. Commercializing ReRAM designs requires the ability to understand and control important factors affecting ReRAM performance and reliability. These include switching layer composition, density, and geometrical dimensions.

Paper Author: Amir Regev, CTO, Weebit-nano

Author Bio: Amir Regev is the Chief Technology Officer (CTO) and co-founder of Weebit-nano, an Israeli start-up. Amir manages ReRAM technology development with CEA/Leti, a French R&D organization. Prior to founding Weebit, he developed device and technology for emerging memories and flash at Intel, SanDisk, Micron and Marvell. Amir holds a M.Sc. in Electrical Engineering from Tel-Aviv University and a B.Sc. in Material Science and Engineering from Ben-Gurion University. In 2015 Amir graduated with a B.A. honors in Psychology from the Open University of Israel.