Paper Title: Update XP ReRAM Technology

Paper Abstract: As reported at the 2017 VLSI Symposium, Sony is developing 100Gbit-class XP ReRAM technology. This new technology requires the parallel development of controller innovations to manage its unique error characteristics. The current specification will be outlined and important new controller functions will be explained. These functions include compensation for the voltage shift of OTS selectors, compensation for the over-set/reset problem, and others.

Paper Author: Amigo Tsutsui, Senior Producer, Sony Semiconductor Solutions

Author Bio: Amigo Tsutsui is the leader of Sony's ReRAM project that was reported in ISSCC 2011 and 2014, VLSI 2014, and IEDM 2014. He was also responsible for Sony's original 1T1R conductive bridge ReRAM (reported in IEDM2007, ISSCC 2011 and 2014), but is now focusing on cross point designs. Amigo is a popular presenter for emerging memory technologies at well-known events, including the VLSI Symposium, IMW, FMS,and PM summit. Amigo now manages the joint development program of Sony's 100Gbit class Cross Point ReRAM product, as reported in VLSI Symposium 2017, which includes Sony's original selector technology.