Paper Title: Process Challenges For 1S-1R Crossbar Type Memory

Paper Abstract: Storage Class Memory, based on 1S-1R architecture, can improve overall system performance by providing high density persistent memory close to compute at access speeds faster than 3D NAND. However, challenges exist in memory and selector materials deposition and patterning that ultimately determine the yield and performance of these memories. A variety of solutions have been proposed to overcome these challenges. .

Paper Author: Mahendra Pakala, Sr Director, Applied Materials

Author Bio: Mahendra Pakala is Managing Director Memory Process Development at Applied Materials, a leading developer of semiconductor manufacturing equipment. His focuses include thin film deposition and characterization, wafer fab processes and equipment, product development, R&D management, and pilot production. He was previously Director Engineering at Western Digital where he developed HDD read heads. He earned a PhD in Materials Science & Engineering from the University of Cincinnati. He holds over 30 granted patents and has published 12 articles on STT-RAM in major journals and conference proceedings.